Micron Technology · NAND Flash
NAND512R3A2CZA6E
Micron Technology NAND Flash · VFBGA-63(9x11)
Request a quote for NAND512R3A2CZA6EThe NAND512R3A2CZA6E is an NAND Flash from Micron Technology, supplied in a VFBGA-63(9x11) package. It is listed in our NAND Flash catalog (Memory).
Key specifications of the NAND512R3A2CZA6E: memory size 512Mbit, interface Parallel, page program time (tpp) 50ns, standby supply current 100uA, operating temperature -40°C~+85°C and block erase time(tbe) 2ms.
PartnerSemi sources the NAND512R3A2CZA6E for production, repair and maintenance buyers worldwide. Send the quantity you need and, optionally, a target price; we reply with price, lead time and available date codes, usually within one business day.
Specifications
| Manufacturer part number | NAND512R3A2CZA6E |
|---|---|
| Manufacturer | Micron Technology |
| Product type | NAND Flash |
| Category | NAND Flash |
| Package / case | VFBGA-63(9x11) |
| Block Erase Time(tBE) | 2ms |
| Data Retention - TDR (Year) | 10 years |
| ECC | Yes |
| Interface | Parallel |
| Memory Size | 512Mbit |
| Operating Temperature | -40°C~+85°C |
| Page Program time (TPP) | 50ns |
| Program / Erase Cycles | 100,000 cycles |
| Standby Supply Current | 100uA |
| Voltage - Supply | 1.7V~1.95V |
Specifications are indicative and taken from public catalog data; always verify against the manufacturer's datasheet.
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|---|---|---|
| NAND08GW3D2AN6E | NAND Flash | |
| NAND16GW3D2BN6E | NAND Flash | |
| NAND16GW3F2AN6E | NAND Flash | |
| NAND32GW3F4AN6E | NAND Flash | |
| NAND512W3A2CZA6E | NAND Flash |
Similar part numbers from other manufacturers
Similar numbering only — not a confirmed equivalent. Ask us to check compatibility.
| Part number | Manufacturer | Type | |
|---|---|---|---|
| NAND512R3A2AZA6E | STMicroelectronics | NAND Flash | |
| NAND512R3A2BZA6E | STMicroelectronics | NAND Flash | |
| NAND512R3A3AZA6E | STMicroelectronics | NAND Flash |
Frequently asked questions
What is the NAND512R3A2CZA6E?
The NAND512R3A2CZA6E is an NAND Flash from Micron Technology, supplied in a VFBGA-63(9x11) package. It is listed in our NAND Flash catalog (Memory).
What are the specifications of the NAND512R3A2CZA6E?
Block Erase Time(tBE): 2ms; Data Retention - TDR (Year): 10 years; ECC: Yes; Interface: Parallel; Memory Size: 512Mbit; Operating Temperature: -40°C~+85°C; Page Program time (TPP): 50ns; Program / Erase Cycles: 100,000 cycles; Standby Supply Current: 100uA; Voltage - Supply: 1.7V~1.95V.
What package is the NAND512R3A2CZA6E in?
The NAND512R3A2CZA6E is listed in a VFBGA-63(9x11) package.
Which part numbers are similar to the NAND512R3A2CZA6E?
Similar part numbers in our catalog include NAND512R3A2AZA6E (STMicroelectronics), NAND512R3A2BZA6E (STMicroelectronics) and NAND512R3A3AZA6E (STMicroelectronics). Similar numbering does not guarantee compatibility; check the datasheets or ask us to confirm.
How can I buy the NAND512R3A2CZA6E?
Request a quote from PartnerSemi at https://www.partnersemi.com/rfq/?mpn=NAND512R3A2CZA6E&brand=Micron%20Technology or email info@partnersemi.com with the part number and quantity. Price, availability and lead time are confirmed per request; we ship worldwide from the Netherlands.