Micron Technology · NAND Flash
NAND16GW3D2BN6E
Micron Technology NAND Flash · TSOP-48
Request a quote for NAND16GW3D2BN6EThe NAND16GW3D2BN6E is an NAND Flash from Micron Technology, supplied in a TSOP-48 package. It is listed in our NAND Flash catalog (Memory).
Key specifications of the NAND16GW3D2BN6E: memory size 16Gbit, page program time (tpp) 800us, standby supply current 10uA, operating temperature -40°C~+85°C, block erase time(tbe) 2.5ms and data retention - tdr (year) 5 Years.
PartnerSemi sources the NAND16GW3D2BN6E for production, repair and maintenance buyers worldwide. Send the quantity you need and, optionally, a target price; we reply with price, lead time and available date codes, usually within one business day.
Specifications
| Manufacturer part number | NAND16GW3D2BN6E |
|---|---|
| Manufacturer | Micron Technology |
| Product type | NAND Flash |
| Category | NAND Flash |
| Package / case | TSOP-48 |
| Block Erase Time(tBE) | 2.5ms |
| Data Retention - TDR (Year) | 5 Years |
| Memory Size | 16Gbit |
| Operating Temperature | -40°C~+85°C |
| Page Program time (TPP) | 800us |
| Program / Erase Cycles | 5,000 cycles |
| Standby Supply Current | 10uA |
| Voltage - Supply | 2.7V~3.6V |
Specifications are indicative and taken from public catalog data; always verify against the manufacturer's datasheet.
More Micron Technology NAND Flash
| Part number | Type | |
|---|---|---|
| NAND04GR3B2DN6E | NAND Flash | |
| NAND04GW3B2DN6E | NAND Flash | |
| NAND08GAH0JZC5E | NAND Flash | |
| NAND08GW3D2AN6E | NAND Flash | |
| NAND16GW3F2AN6E | NAND Flash | |
| NAND32GW3F4AN6E | NAND Flash | |
| NAND512R3A2CZA6E | NAND Flash | |
| NAND512W3A2CZA6E | NAND Flash |
Frequently asked questions
What is the NAND16GW3D2BN6E?
The NAND16GW3D2BN6E is an NAND Flash from Micron Technology, supplied in a TSOP-48 package. It is listed in our NAND Flash catalog (Memory).
What are the specifications of the NAND16GW3D2BN6E?
Block Erase Time(tBE): 2.5ms; Data Retention - TDR (Year): 5 Years; Memory Size: 16Gbit; Operating Temperature: -40°C~+85°C; Page Program time (TPP): 800us; Program / Erase Cycles: 5,000 cycles; Standby Supply Current: 10uA; Voltage - Supply: 2.7V~3.6V.
What package is the NAND16GW3D2BN6E in?
The NAND16GW3D2BN6E is listed in a TSOP-48 package.
Which part numbers are similar to the NAND16GW3D2BN6E?
Similar part numbers in our catalog include NAND04GR3B2DN6E (Micron Technology), NAND04GW3B2DN6E (Micron Technology), NAND08GAH0JZC5E (Micron Technology), NAND08GW3D2AN6E (Micron Technology), NAND16GW3F2AN6E (Micron Technology) and NAND32GW3F4AN6E (Micron Technology). Similar numbering does not guarantee compatibility; check the datasheets or ask us to confirm.
How can I buy the NAND16GW3D2BN6E?
Request a quote from PartnerSemi at https://www.partnersemi.com/rfq/?mpn=NAND16GW3D2BN6E&brand=Micron%20Technology or email info@partnersemi.com with the part number and quantity. Price, availability and lead time are confirmed per request; we ship worldwide from the Netherlands.