Winbond · NAND Flash

W25N512GWFIR TR

Winbond NAND Flash · SOIC-16-300mil

Request a quote for W25N512GWFIR TR

The W25N512GWFIR TR is an NAND Flash from Winbond, supplied in a SOIC-16-300mil package. It is listed in our NAND Flash catalog (Memory).

Key specifications of the W25N512GWFIR TR: memory size 512Mbit, interface SPI, clock frequency 104MHz, page program time (tpp) 700us, standby supply current 10uA and operating temperature -40°C~+85°C.

PartnerSemi sources the W25N512GWFIR TR for production, repair and maintenance buyers worldwide. Send the quantity you need and, optionally, a target price; we reply with price, lead time and available date codes, usually within one business day.

Specifications

Manufacturer part numberW25N512GWFIR TR
ManufacturerWinbond
Product typeNAND Flash
CategoryNAND Flash
Package / caseSOIC-16-300mil
Block Erase Time(tBE)2ms
Clock Frequency104MHz
Data Retention - TDR (Year)10 years
ECCYes
InterfaceSPI
Memory Size512Mbit
Operating Temperature-40°C~+85°C
Page Program time (TPP)700us
Program / Erase Cycles100,000 cycles
Standby Supply Current10uA
Voltage - Supply1.7V~1.95V

Specifications are indicative and taken from public catalog data; always verify against the manufacturer's datasheet.

More Winbond NAND Flash

Part numberTypePackageKey specs
W25N512GWEIR TR NAND Flash WSON-8(6x8) 512MbitSPI
W25N512GWEIT NAND Flash WSON-8(6x8) 512MbitSPI
W25N512GWEIT TR NAND Flash WSON-8(6x8) 512MbitSPI
W25N512GWFIR NAND Flash SOIC-16-300mil 512MbitSPI
W25N512GWFIT TR NAND Flash SOIC-16-300mil 512MbitSPI
W29N01GVBIAA NAND Flash VFBGA-63(9x11) 1GbitParallel
W29N01GVDIAA NAND Flash VFBGA-48(6.5x8) 1Gbit25ns
W29N01GWDIBA NAND Flash VFBGA-48(6.5x8) 1GbitParallel

Frequently asked questions

What is the W25N512GWFIR TR?

The W25N512GWFIR TR is an NAND Flash from Winbond, supplied in a SOIC-16-300mil package. It is listed in our NAND Flash catalog (Memory).

What are the specifications of the W25N512GWFIR TR?

Block Erase Time(tBE): 2ms; Clock Frequency: 104MHz; Data Retention - TDR (Year): 10 years; ECC: Yes; Interface: SPI; Memory Size: 512Mbit; Operating Temperature: -40°C~+85°C; Page Program time (TPP): 700us; Program / Erase Cycles: 100,000 cycles; Standby Supply Current: 10uA; Voltage - Supply: 1.7V~1.95V.

What package is the W25N512GWFIR TR in?

The W25N512GWFIR TR is listed in a SOIC-16-300mil package.

Which part numbers are similar to the W25N512GWFIR TR?

Similar part numbers in our catalog include W25N512GWEIR TR (Winbond), W25N512GWEIT (Winbond), W25N512GWEIT TR (Winbond), W25N512GWFIR (Winbond), W25N512GWFIT TR (Winbond) and W29N01GVBIAA (Winbond). Similar numbering does not guarantee compatibility; check the datasheets or ask us to confirm.

How can I buy the W25N512GWFIR TR?

Request a quote from PartnerSemi at https://www.partnersemi.com/rfq/?mpn=W25N512GWFIR%20TR&brand=Winbond or email info@partnersemi.com with the part number and quantity. Price, availability and lead time are confirmed per request; we ship worldwide from the Netherlands.