Micron Technology · NAND Flash
NAND02GW3B2DN6E
Micron Technology NAND Flash · TSOP-48
Request a quote for NAND02GW3B2DN6EThe NAND02GW3B2DN6E is an NAND Flash from Micron Technology, supplied in a TSOP-48 package. It is listed in our NAND Flash catalog (Memory).
Key specifications of the NAND02GW3B2DN6E: memory size 2Gbit, page program time (tpp) 200us, voltage - supply 2.7V~3.6V, block erase time(tbe) 1.5ms, ECC Yes and program / erase cycles 100,000 cycles.
PartnerSemi sources the NAND02GW3B2DN6E for production, repair and maintenance buyers worldwide. Send the quantity you need and, optionally, a target price; we reply with price, lead time and available date codes, usually within one business day.
Specifications
| Manufacturer part number | NAND02GW3B2DN6E |
|---|---|
| Manufacturer | Micron Technology |
| Product type | NAND Flash |
| Category | NAND Flash |
| Package / case | TSOP-48 |
| Block Erase Time(tBE) | 1.5ms |
| ECC | Yes |
| Memory Size | 2Gbit |
| Page Program time (TPP) | 200us |
| Program / Erase Cycles | 100,000 cycles |
| Voltage - Supply | 2.7V~3.6V |
Specifications are indicative and taken from public catalog data; always verify against the manufacturer's datasheet.
More Micron Technology NAND Flash
| Part number | Type | |
|---|---|---|
| NAND01GR3B2CZA6E | NAND Flash | |
| NAND01GW3B2BZA6E | NAND Flash | |
| NAND01GW3B2CN6E | NAND Flash | |
| NAND02GR3B2DZA6E | NAND Flash | |
| NAND02GW3B2DZA6E | NAND Flash | |
| NAND04GR3B2DN6E | NAND Flash | |
| NAND04GW3B2DN6E | NAND Flash | |
| NAND08GAH0JZC5E | NAND Flash |
Similar part numbers from other manufacturers
Similar numbering only — not a confirmed equivalent. Ask us to check compatibility.
| Part number | Manufacturer | Type | |
|---|---|---|---|
| NAND02GW3B2AN6F | STMicroelectronics | NAND Flash |
Frequently asked questions
What is the NAND02GW3B2DN6E?
The NAND02GW3B2DN6E is an NAND Flash from Micron Technology, supplied in a TSOP-48 package. It is listed in our NAND Flash catalog (Memory).
What are the specifications of the NAND02GW3B2DN6E?
Block Erase Time(tBE): 1.5ms; ECC: Yes; Memory Size: 2Gbit; Page Program time (TPP): 200us; Program / Erase Cycles: 100,000 cycles; Voltage - Supply: 2.7V~3.6V.
What package is the NAND02GW3B2DN6E in?
The NAND02GW3B2DN6E is listed in a TSOP-48 package.
Which part numbers are similar to the NAND02GW3B2DN6E?
Similar part numbers in our catalog include NAND02GW3B2AN6F (STMicroelectronics). Similar numbering does not guarantee compatibility; check the datasheets or ask us to confirm.
How can I buy the NAND02GW3B2DN6E?
Request a quote from PartnerSemi at https://www.partnersemi.com/rfq/?mpn=NAND02GW3B2DN6E&brand=Micron%20Technology or email info@partnersemi.com with the part number and quantity. Price, availability and lead time are confirmed per request; we ship worldwide from the Netherlands.