Micron Technology · NAND Flash
MT29F4G08ABADAH4-AATX:D TR
Micron Technology NAND Flash · VFBGA-63(9x11)
Request a quote for MT29F4G08ABADAH4-AATX:D TRThe MT29F4G08ABADAH4-AATX:D TR is an NAND Flash from Micron Technology, supplied in a VFBGA-63(9x11) package. It is listed in our NAND Flash catalog (Memory).
Key specifications of the MT29F4G08ABADAH4-AATX:D TR: memory size 4Gbit, interface Parallel, page program time (tpp) 200us, standby supply current 100uA, operating temperature -40°C~+105°C and block erase time(tbe) 700us.
PartnerSemi sources the MT29F4G08ABADAH4-AATX:D TR for production, repair and maintenance buyers worldwide. Send the quantity you need and, optionally, a target price; we reply with price, lead time and available date codes, usually within one business day.
Specifications
| Manufacturer part number | MT29F4G08ABADAH4-AATX:D TR |
|---|---|
| Manufacturer | Micron Technology |
| Product type | NAND Flash |
| Category | NAND Flash |
| Package / case | VFBGA-63(9x11) |
| Block Erase Time(tBE) | 700us |
| Data Retention - TDR (Year) | 10 years |
| ECC | Yes |
| Interface | Parallel |
| Memory Size | 4Gbit |
| Operating Temperature | -40°C~+105°C |
| Page Program time (TPP) | 200us |
| Program / Erase Cycles | 100,000 cycles |
| Standby Supply Current | 100uA |
| Voltage - Supply | 2.7V~3.6V |
| Write Cycle Time(tWC) | 20ns |
Specifications are indicative and taken from public catalog data; always verify against the manufacturer's datasheet.
More Micron Technology NAND Flash
| Part number | Type | |
|---|---|---|
| MT29F4G01ABBFD12-AUT-F | SLC NAND Flash | |
| MT29F4G01ABBFDWB-IT-F | SLC NAND Flash | |
| MT29F4G01ADAGDWB-IT-G Obsolete | SLC NAND Flash | |
| MT29F4G08ABADAH4-AATX-D | SLC NAND Flash | |
| MT29F4G08ABADAH4-AITX-D | SLC NAND Flash | |
| MT29F4G08ABADAH4-D | SLC NAND Flash | |
| MT29F4G08ABADAH4-IT-D | SLC NAND Flash | |
| MT29F4G08ABADAH4-ITX-D Obsolete | SLC NAND Flash |
Frequently asked questions
What is the MT29F4G08ABADAH4-AATX:D TR?
The MT29F4G08ABADAH4-AATX:D TR is an NAND Flash from Micron Technology, supplied in a VFBGA-63(9x11) package. It is listed in our NAND Flash catalog (Memory).
What are the specifications of the MT29F4G08ABADAH4-AATX:D TR?
Block Erase Time(tBE): 700us; Data Retention - TDR (Year): 10 years; ECC: Yes; Interface: Parallel; Memory Size: 4Gbit; Operating Temperature: -40°C~+105°C; Page Program time (TPP): 200us; Program / Erase Cycles: 100,000 cycles; Standby Supply Current: 100uA; Voltage - Supply: 2.7V~3.6V; Write Cycle Time(tWC): 20ns.
What package is the MT29F4G08ABADAH4-AATX:D TR in?
The MT29F4G08ABADAH4-AATX:D TR is listed in a VFBGA-63(9x11) package.
Which part numbers are similar to the MT29F4G08ABADAH4-AATX:D TR?
Similar part numbers in our catalog include MT29F4G01ABBFD12-AUT-F (Micron Technology), MT29F4G01ABBFDWB-IT-F (Micron Technology), MT29F4G01ADAGDWB-IT-G (Micron Technology), MT29F4G08ABADAH4-AATX-D (Micron Technology), MT29F4G08ABADAH4-AITX-D (Micron Technology) and MT29F4G08ABADAH4-D (Micron Technology). Similar numbering does not guarantee compatibility; check the datasheets or ask us to confirm.
How can I buy the MT29F4G08ABADAH4-AATX:D TR?
Request a quote from PartnerSemi at https://www.partnersemi.com/rfq/?mpn=MT29F4G08ABADAH4-AATX%3AD%20TR&brand=Micron%20Technology or email info@partnersemi.com with the part number and quantity. Price, availability and lead time are confirmed per request; we ship worldwide from the Netherlands.