Micron Technology · NAND Flash
MT29F2G08ABAEAWP-IT:E TR
Micron Technology NAND Flash · TSOPI-48
Request a quote for MT29F2G08ABAEAWP-IT:E TRThe MT29F2G08ABAEAWP-IT:E TR is an NAND Flash from Micron Technology, supplied in a TSOPI-48 package. It is listed in our NAND Flash catalog (Memory).
Key specifications of the MT29F2G08ABAEAWP-IT:E TR: memory size 2Gbit, interface Parallel, page program time (tpp) 200us, voltage - supply 2.7V~3.6V, operating temperature -40°C~+85°C and block erase time(tbe) 700us.
PartnerSemi sources the MT29F2G08ABAEAWP-IT:E TR for production, repair and maintenance buyers worldwide. Send the quantity you need and, optionally, a target price; we reply with price, lead time and available date codes, usually within one business day.
Specifications
| Manufacturer part number | MT29F2G08ABAEAWP-IT:E TR |
|---|---|
| Manufacturer | Micron Technology |
| Product type | NAND Flash |
| Category | NAND Flash |
| Package / case | TSOPI-48 |
| Block Erase Time(tBE) | 700us |
| Data Retention - TDR (Year) | 10 years |
| ECC | Yes |
| Interface | Parallel |
| Memory Size | 2Gbit |
| Operating Temperature | -40°C~+85°C |
| Page Program time (TPP) | 200us |
| Program / Erase Cycles | 100,000 cycles |
| Voltage - Supply | 2.7V~3.6V |
| Write Cycle Time(tWC) | 20ns |
Specifications are indicative and taken from public catalog data; always verify against the manufacturer's datasheet.
More Micron Technology NAND Flash
| Part number | Type | |
|---|---|---|
| MT29F2G08ABAEAH4-IT:E | SLC NAND Flash | |
| MT29F2G08ABAEAWP-AATX-E | SLC NAND Flash | |
| MT29F2G08ABAEAWP-AITX-E | SLC NAND Flash | |
| MT29F2G08ABAEAWP:E | SLC NAND Flash | |
| MT29F2G08ABAGAH4-AATES-G Obsolete | SLC NAND Flash | |
| MT29F2G08ABAGAH4-AAT-G | SLC NAND Flash | |
| MT29F2G08ABAGAH4-AITES-G Obsolete | SLC NAND Flash | |
| MT29F2G08ABAGAH4-AIT-G | SLC NAND Flash |
Frequently asked questions
What is the MT29F2G08ABAEAWP-IT:E TR?
The MT29F2G08ABAEAWP-IT:E TR is an NAND Flash from Micron Technology, supplied in a TSOPI-48 package. It is listed in our NAND Flash catalog (Memory).
What are the specifications of the MT29F2G08ABAEAWP-IT:E TR?
Block Erase Time(tBE): 700us; Data Retention - TDR (Year): 10 years; ECC: Yes; Interface: Parallel; Memory Size: 2Gbit; Operating Temperature: -40°C~+85°C; Page Program time (TPP): 200us; Program / Erase Cycles: 100,000 cycles; Voltage - Supply: 2.7V~3.6V; Write Cycle Time(tWC): 20ns.
What package is the MT29F2G08ABAEAWP-IT:E TR in?
The MT29F2G08ABAEAWP-IT:E TR is listed in a TSOPI-48 package.
Which part numbers are similar to the MT29F2G08ABAEAWP-IT:E TR?
Similar part numbers in our catalog include MT29F2G08ABAEAH4-IT:E (Micron Technology), MT29F2G08ABAEAWP-AATX-E (Micron Technology), MT29F2G08ABAEAWP-AITX-E (Micron Technology), MT29F2G08ABAEAWP:E (Micron Technology), MT29F2G08ABAGAH4-AATES-G (Micron Technology) and MT29F2G08ABAGAH4-AAT-G (Micron Technology). Similar numbering does not guarantee compatibility; check the datasheets or ask us to confirm.
How can I buy the MT29F2G08ABAEAWP-IT:E TR?
Request a quote from PartnerSemi at https://www.partnersemi.com/rfq/?mpn=MT29F2G08ABAEAWP-IT%3AE%20TR&brand=Micron%20Technology or email info@partnersemi.com with the part number and quantity. Price, availability and lead time are confirmed per request; we ship worldwide from the Netherlands.